On the limits of applicability of drift-diffusion based hot carrier degradation modeling
نویسندگان
چکیده
منابع مشابه
Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs
a r t i c l e i n f o Keywords: Distribution function Hot-carrier degradation nLDMOS transistor Spherical harmonics expansion Drift–diffusion scheme Interface states Modeling We analyze the applicability of different analytic models for the carrier distribution function (DF), namely the heated Maxwellian, the Cassi model, the Hasnat approach, the Reggiani model, and our own concept, to describe...
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